DIODES ZXMP3F35N8TA
Manufacturer No:
ZXMP3F35N8TA
Manufacturer:
DIODES
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 12m ? @ 12A, 10V ±20V 4600pF @ 15V 77.1nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :6960
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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ZXMP3F35N8TA Information
DIODES ZXMP3F35N8TA technical specifications, attributes, parameters and parts with similar specifications to DIODES ZXMP3F35N8TA.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Weight
- 506.605978mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2008
- JESD-609 Code
- e3
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Resistance
- 12mOhm
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for DIODES ZXMP3F35N8TA.
ZXMP3F35N8TA Overview
A device's maximal input capacitance is 4600pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 17.1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 103 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
ZXMP3F35N8TA Features
a continuous drain current (ID) of 12.3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 103 ns
a 30V drain to source voltage (Vdss)
ZXMP3F35N8TA Applications
There are a lot of Diodes Incorporated
ZXMP3F35N8TA applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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