ZXMN6A08E6QTA-DIODES-Price, Stock & Datasheet

ZXMN6A08E6QTA Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 459pF @ 40V.This device conducts a continuous drain current (ID) of 2.8A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12.3 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 150mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 2.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

ZXMN6A08E6QTA Features

a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12.3 ns
single MOSFETs transistor is 150mOhm
a 60V drain to source voltage (Vdss)