DIODES DSS2540M-7B
Manufacturer No:
DSS2540M-7B
Manufacturer:
DIODES
Package:
3-UFDFN
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
Quantity:
In Stock :2733
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DSS2540M-7B Information
DIODES DSS2540M-7B technical specifications, attributes, parameters and parts with similar specifications to DIODES DSS2540M-7B.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- JESD-609 Code
- e4
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 250mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for DIODES DSS2540M-7B.
Environmental Information:
DSS2540M-7B Overview
DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
DSS2540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DSS2540M-7B Applications
There are a lot of Diodes Incorporated
DSS2540M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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