

DIODES DSS2540M-7B
Manufacturer No:
DSS2540M-7B
Manufacturer:
Package:
3-UFDFN
Description:
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-UFDFN Tape & Reel (TR) Surface Mount
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In Stock :Available
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DSS2540M-7B information
DIODES DSS2540M-7B technical specifications, attributes, parameters and parts with similar specifications to DIODES DSS2540M-7B.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-UFDFN
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2015
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Subcategory
- Other Transistors
- Max Power Dissipation
- 250mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 300MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- DSS2540M
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 250mW
- Case Connection
- COLLECTOR
- Gain Bandwidth Product
- 300MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 100mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage
- 40V
- Transition Frequency
- 300MHz
- Collector Emitter Saturation Voltage
- 250mV
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 6V
- Continuous Collector Current
- 500mA
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for DIODES DSS2540M-7B.
Environmental Information:
DSS2540M-7B Overview
DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 40V volts.In extreme cases, the collector current can be as low as 500mA volts.
DSS2540M-7B Features
the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DSS2540M-7B Applications
There are a lot of Diodes Incorporated
DSS2540M-7B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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