Microchip VN4012L-G

Manufacturer No:

VN4012L-G

Manufacturer:

Microchip

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V, 12 Ohm

Quantity:

In Stock :8107

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Shipping & Availability

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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PURCHASE

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MEANS OF PAYMENT

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

VN4012L-G Information

Microchip VN4012L-G technical specifications, attributes, parameters and parts with similar specifications to Microchip VN4012L-G.

Type
Parameter

BVdss min (V)
400

Rds (on) max (Ohms)
12

CISSmax (pF)
110

Vgs(th) max (V)
1.8

Package
TO-92

Type
Parameter

Download datasheets and manufacturer documentation for Microchip VN4012L-G.

Application Notes:

dff88685ac5138ab05f86f0b2c996f38.pdf

d78d5e81e365278d2ee0f546e3de7da4.pdf

Data Sheets:

aa949963a4e04019f6c88c33560dd6cd.pdf

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.