Microchip VN0106N3-G
Manufacturer No:
VN0106N3-G
Manufacturer:
Microchip
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 3.0 Ohm
Quantity:
In Stock :4251
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
VN0106N3-G Information
Microchip VN0106N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip VN0106N3-G.
- Type
- Parameter
- BVdss min (V)
- 60
- Rds (on) max (Ohms)
- 3.0
- CISSmax (pF)
- 65
- Vgs(th) max (V)
- 2.4
- Package
- TO-92
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip VN0106N3-G.
Application Notes:
Data Sheets:
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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