ONSEMI UJ3N120035K3S
Manufacturer No:
UJ3N120035K3S
Manufacturer:
Package:
TO-247-3
Description:
Silicon Carbide (SiC) JFET - EliteSiC, 35 mohm, 1200V, TO-247-3L
Quantity:
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Step2：Desiccant Protection
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Step6：Packaging Box
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UJ3N120035K3S Information
ONSEMI UJ3N120035K3S technical specifications, attributes, parameters and parts with similar specifications to ONSEMI UJ3N120035K3S.
- Type
- Parameter
- Case Outline
- 340AK
- MSL Temp (°C)
- 0
- Container Qty.
- 600
- Drain Source Voltage
- 1200
- Typical RDS(on)
- 35
- TJ(max) (°C)
- 175
- Bare Die
- N
- Package Type
- TO-247
- MSL Type
- NA
- ID(peak) (A)
- 185
- Type
- Parameter
- Package
- TO-247-3L
- Output capacitance Coss (pF)
- 180
- Container Type
- TUBE
- Qg (nC)
- 235
Download datasheets and manufacturer documentation for ONSEMI UJ3N120035K3S.
Datasheet:
Package Drawing:
The UJ3N120035K3S is a 1200V, 35 mohm high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Application
- Over Current Protection Circuits
- DC-AC Inverters
- Switch mode power supplies
- Power factor correction modules
- Motor drives
- Induction heating
End Product
- Circuit Breaker
- Battery Charger
- Solar
- Energy Storage System
- Industrial Power Supply
Feature
- Operating temperature: 175°C (max)
- Extremely fast switching not dependent on temperature
- Low gate charge and intrinsic capacitance
- RoHS compliant
UJ3N120035K3S Relevant information
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