Microchip TP2635N3-G
Manufacturer No:
TP2635N3-G
Manufacturer:
Microchip
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 Ohm
Quantity:
In Stock :4050
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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TP2635N3-G Information
Microchip TP2635N3-G technical specifications, attributes, parameters and parts with similar specifications to Microchip TP2635N3-G.
- Type
- Parameter
- BVdss min (V)
- -350
- Rds (on) max (Ohms)
- 15
- CISSmax (pF)
- 300
- Vgs(th) max (V)
- -2.0
- Package
- TO-92
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip TP2635N3-G.
Application Notes:
Data Sheets:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
- Low threshold (-2.0V max.)
- High input impedance
- Low input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakage
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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