ONSEMI TN6729A
ONSEMI TN6729A

ONSEMI TN6729A

Manufacturer No:

TN6729A

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

PNP -55°C~150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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TN6729A information

ONSEMI TN6729A technical specifications, attributes, parameters and parts with similar specifications to ONSEMI TN6729A.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
  • 3
  • Supplier Device Package
  • TO-226-3
  • Weight
  • 250mg
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Bulk
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Max Operating Temperature
  • 150°C
  • Min Operating Temperature
  • -55°C
  • Voltage - Rated DC
  • -80V
  • Max Power Dissipation
  • 1W
  • Current Rating
  • -1A
  • Base Part Number
  • TN6729A
  • Number of Elements
  • 1
  • Polarity
  • PNP
  • Element Configuration
  • Single
  • Power Dissipation
  • 1W
  • Power - Max
  • 1W
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 80V
  • Max Collector Current
  • 1A
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 10mA, 250mA
  • Collector Emitter Breakdown Voltage
  • 80V
  • Voltage - Collector Emitter Breakdown (Max)
  • 80V
  • Current - Collector (Ic) (Max)
  • 1A
  • Collector Emitter Saturation Voltage
  • 500mV
  • Collector Base Voltage (VCBO)
  • 80V
  • Emitter Base Voltage (VEBO)
  • 5V
  • hFE Min
  • 50
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ONSEMI TN6729A.

Datasheets:

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TN6729A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-226-3 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.

TN6729A Features


the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
the supplier device package of TO-226-3


TN6729A Applications


There are a lot of ON Semiconductor
TN6729A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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