ONSEMI TN6729A
Manufacturer No:
TN6729A
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:
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TN6729A Information
ONSEMI TN6729A technical specifications, attributes, parameters and parts with similar specifications to ONSEMI TN6729A.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins
- 3
- Supplier Device Package
- TO-226-3
- Weight
- 250mg
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- -80V
- Max Power Dissipation
- 1W
- Current Rating
- -1A
- Base Part Number
- TN6729A
- Number of Elements
- 1
- Polarity
- PNP
- Element Configuration
- Single
- Power Dissipation
- 1W
Download datasheets and manufacturer documentation for ONSEMI TN6729A.
Datasheets:
ReachStatement:
TN6729A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.TO-226-3 is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.
TN6729A Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
the supplier device package of TO-226-3
TN6729A Applications
There are a lot of ON Semiconductor
TN6729A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
TN6729A Relevant information
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