Microchip TC4421EMF713
Manufacturer No:
TC4421EMF713
Manufacturer:
Package:
8-VDFN Exposed Pad
Description:
9 A MOSFET Gate Driver
Quantity:
Delivery:
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In Stock :Available
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TC4421EMF713 information
Microchip TC4421EMF713 technical specifications, attributes, parameters and parts with similar specifications to Microchip TC4421EMF713.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 9
- Peak Sink Output (A)
- 9
- Source Resistance (Ω)
- 2.4
- Sink Resistance (Ω)
- 1.7
- Propagation Delay t<sub>D1</sub> (ns)
- 50
- Propagation Delay t<sub>D2</sub> (ns)
- 53
- Rise Time (t<sub>R</sub>, ns)
- 28
- Fall Time (t<sub>F</sub>, ns)
- 26
- Capacitive Load Drive
- 4,700 pF in 15 ns
Download datasheets and manufacturer documentation for Microchip TC4421EMF713.
Application Notes:
User Guide:
The TC4421/4422 are high current buffer/gate drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5 V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3 V to 18 V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.
User Guide
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