ST STQ3NK50ZR-AP
Manufacturer No:
STQ3NK50ZR-AP
Manufacturer:
ST
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 3.3 ? @ 1.15A, 10V ±30V 280pF @ 25V 15nC @ 10V 500V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Quantity:
In Stock :3919
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STQ3NK50ZR-AP Information
ST STQ3NK50ZR-AP technical specifications, attributes, parameters and parts with similar specifications to ST STQ3NK50ZR-AP.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Series
- SuperMESH?
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ST STQ3NK50ZR-AP.
STQ3NK50ZR-AP Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 120 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 280pF @ 25V.This device has a continuous drain current (ID) of [500mA], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 0.5A.A maximum pulsed drain current of 2A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STQ3NK50ZR-AP Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 500mA
based on its rated peak drain current 2A.
a 500V drain to source voltage (Vdss)
STQ3NK50ZR-AP Applications
There are a lot of STMicroelectronics
STQ3NK50ZR-AP applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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