ST STQ2LN60K3-AP
Manufacturer No:
STQ2LN60K3-AP
Manufacturer:
ST
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 4.5 ? @ 1A, 10V ±30V 235pF @ 50V 12nC @ 10V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Quantity:
In Stock :1159
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Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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STQ2LN60K3-AP Information
ST STQ2LN60K3-AP technical specifications, attributes, parameters and parts with similar specifications to ST STQ2LN60K3-AP.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 9 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- SuperMESH3?
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Base Part Number
- STQ2
- Power Dissipation-Max
- 2.5W Tc
- Power Dissipation
- 2.5W
- Turn On Delay Time
- 10 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 4.5 ? @ 1A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 50?A
- Input Capacitance (Ciss) (Max) @ Vds
- 235pF @ 50V
Download datasheets and manufacturer documentation for ST STQ2LN60K3-AP.
STQ2LN60K3-AP Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 235pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 600mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STQ2LN60K3-AP Features
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23.5 ns
STQ2LN60K3-AP Applications
There are a lot of STMicroelectronics
STQ2LN60K3-AP applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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