STQ2HNK60ZR-AP-ST-Price, Stock & Datasheet

STQ2HNK60ZR-AP Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 120 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 280pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 500mA.0.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.Peak drain current for this device is 2A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

STQ2HNK60ZR-AP Features

the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 500mA
the turn-off delay time is 13 ns
based on its rated peak drain current 2A.
a 600V drain to source voltage (Vdss)