ST STH10N80K5-2AG

Manufacturer No:

STH10N80K5-2AG

Manufacturer:

ST

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel 680mOhm @ 4A, 10V ±30V 426 pF @ 100 V 17.3 nC @ 10 V 800 V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

In Stock :8331

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STH10N80K5-2AG Information

ST STH10N80K5-2AG technical specifications, attributes, parameters and parts with similar specifications to ST STH10N80K5-2AG.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Supplier Device Package
H2Pak-2

Mfr
STMicroelectronics

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
121W (Tc)

Base Product Number
STH10

Series
Automotive, AEC-Q101

Type
Parameter

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
680mOhm @ 4A, 10V

Vgs(th) (Max) @ Id
5V @ 100?A

Input Capacitance (Ciss) (Max) @ Vds
426 pF @ 100 V

Current - Continuous Drain (Id) @ 25°C
8A (Tc)

Gate Charge (Qg) (Max) @ Vgs
17.3 nC @ 10 V

Drain to Source Voltage (Vdss)
800 V

Vgs (Max)
±30V

Download datasheets and manufacturer documentation for ST STH10N80K5-2AG.

STH10N80K5-2AG Overview

The maximum input capacitance of this device is 426 pF @ 100 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 800 V in order to operate.