ST STGWA25H120DF2
ST STGWA25H120DF2

ST STGWA25H120DF2

Manufacturer No:

STGWA25H120DF2

Manufacturer:

ST

Package:

,

Description:

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

DHL
DHL

In Stock :7160

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Shipped from:HK Warehouse
Expected Shipping:Sun, May 31 - Mon, Jun 1, 2026
Date Code:Within 2 Years

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

STGWA25H120DF2 Information

ST STGWA25H120DF2 technical specifications, attributes, parameters and parts with similar specifications to ST STGWA25H120DF2.

  • Type
  • Parameter
  • Part Life Cycle Code
  • Active
  • Ihs Manufacturer
  • STMICROELECTRONICS
  • Package Description
  • ,
  • Reach Compliance Code
  • compliant
  • ECCN Code
  • EAR99
  • Factory Lead Time
  • 15 Weeks
  • Samacsys Manufacturer
  • STMicroelectronics
  • Collector Current-Max (IC)
  • 50 A
  • Collector-Emitter Voltage-Max
  • 1200 V
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Type
  • Parameter
  • Gate-Emitter Thr Voltage-Max
  • 7 V
  • Gate-Emitter Voltage-Max
  • 20 V
  • JEDEC-95 Code
  • TO-247
  • JESD-30 Code
  • R-PSFM-T3
  • JESD-609 Code
  • e3
  • Number of Elements
  • 1
  • Number of Terminals
  • 3
  • Operating Temperature-Max
  • 175 °C
  • Operating Temperature-Min
  • -55 °C
  • Package Body Material
  • PLASTIC/EPOXY

Download datasheets and manufacturer documentation for ST STGWA25H120DF2.

STGWA25H120DF2 Description


The STGWA25H120DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the H series of IGBTs, which stands for the best conduction and switching loss compromise for high-switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce a safer paralleling operation.



STGWA25H120DF2 Features


  • Safe paralleling

  • Minimized tail current

  • Low thermal resistance

  • High-speed switching series

  • VCE(sat) = 2.1 V (typ.) @ IC = 25 A

  • Very fast recovery antiparallel diode

  • Maximum junction temperature: TJ = 175 °C

  • 5 ?s minimum short circuit withstand time at TJ = 150 °C



STGWA25H120DF2 Applications


  • Automotive

  • Enterprise systems

  • Communications equipment