STMicroelectronics STGAP2GSNC
Manufacturer No:
STGAP2GSNC
Manufacturer:
STMicroelectronics
Package:
Description:
Galvanically Isolated Gate Drivers Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
Quantity:
In Stock :7394
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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STGAP2GSNC Information
STMicroelectronics STGAP2GSNC technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGAP2GSNC.
- Type
- Parameter
- Operating Range
- Industrial
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tube
- RoHS Status
- Grade
- Industrial
- Package Name
- SO-8
- Operating Range
- Industrial
- Type
- Parameter
- Operating Temp Min Celsius
- -40.0
- Operating Temp Max Celsius
- 125.0
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tube
- RoHS Status
- Grade
- Industrial
- Package Name
- SO-8
Download datasheets and manufacturer documentation for STMicroelectronics STGAP2GSNC.
Data sheet:
Material Declaration:
The STGAP2GSN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 2 A source and 3 A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications.
The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors.
The device integrates protection functions including thermal shutdown ans UVLO with optimized level for Enhancement-mode GaN FETs, which enables easy design high efficiency and reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction.
The input to output propagation delay results contained within 45 ns, providing high PWM control accuracy.
A standby mode is available to reduce idle power consumption.
- High voltage rail up to 1700 V
- Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V
- dV/dt transient immunity ±100 V/ns
- Input-output propagation delay: 45 ns
- Separate sink and source option for easy gate driving configuration
- UVLO function optimized for GaN
- Gate driving voltage up to 15 V
- 3.3 V, 5 V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection
- Standby function
- Narrow body SO-8 package
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12.28 M
Listed Part Number
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