ST STD14NM50NAG
Manufacturer No:
STD14NM50NAG
Manufacturer:
ST
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 320m ? @ 6A, 10V ±25V 816pF @ 50V 27nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :4337
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STD14NM50NAG Information
ST STD14NM50NAG technical specifications, attributes, parameters and parts with similar specifications to ST STD14NM50NAG.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, MDmesh? II
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Base Part Number
- STD14
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 90W
Download datasheets and manufacturer documentation for ST STD14NM50NAG.
STD14NM50NAG Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 172 mJ.The maximum input capacitance of this device is 816pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 12A.There is no pulsed drain current maximum for this device based on its rated peak drain current 48A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
STD14NM50NAG Features
the avalanche energy rating (Eas) is 172 mJ
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)
STD14NM50NAG Applications
There are a lot of STMicroelectronics
STD14NM50NAG applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
Listed Part Number
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