ST STB46N30M5
Manufacturer No:
STB46N30M5
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 40m ? @ 26.5A, 10V ±25V 4240pF @ 100V 95nC @ 10V 300V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1496
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
Payment
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All components supplied by Aichiplink are sourced from trusted global suppliers and verified through strict in-house inspection and quality control procedures.
Quality Assurance
Certified in-house inspection and testing facilities ensure all components meet internationally recognized quality standards.
User Guide
Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.
PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
MEANS OF PAYMENTFor your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and Wire Transfer. Net terms may be available for qualified customers upon approval.
RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB46N30M5 Information
ST STB46N30M5 technical specifications, attributes, parameters and parts with similar specifications to ST STB46N30M5.
- Type
- Parameter
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time
- 17 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Series
- Automotive, AEC-Q101, MDmesh? V
- Part Status
- Active
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Base Part Number
- STB46N
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for ST STB46N30M5.
STB46N30M5 Description
The STB46N30M5 device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics? well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.
STB46N30M5 Features
Designed for automotive applications and AEC-Q101 qualified
Amongst the best RDS(on) area
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
STB46N30M5 Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
The STB46N30M5 device is an N-channel MDmesh? V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics? well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. These exhibit high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels. However its operating principle is similar to that of any other general MOSFET.
STB46N30M5 Features
Designed for automotive applications and AEC-Q101 qualified
Amongst the best RDS(on) area
High dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
STB46N30M5 Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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