ST STB130NS04ZBT4
Manufacturer No:
STB130NS04ZBT4
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 9m ? @ 40A, 10V Clamped 2700pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :2395
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB130NS04ZBT4 Information
ST STB130NS04ZBT4 technical specifications, attributes, parameters and parts with similar specifications to ST STB130NS04ZBT4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- MESH OVERLAY?
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
- Current Rating
- 80A
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for ST STB130NS04ZBT4.
STB130NS04ZBT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 2700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 33V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 220 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 40 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 18V volts.This device reduces its overall power consumption by using drive voltage (10V).
STB130NS04ZBT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 33V voltage
the turn-off delay time is 220 ns
STB130NS04ZBT4 Applications
There are a lot of STMicroelectronics
STB130NS04ZBT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
