ST STB11NM60FDT4
Manufacturer No:
STB11NM60FDT4
Manufacturer:
ST
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 450m ? @ 5.5A, 10V ±30V 900pF @ 25V 40nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :5305
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
STB11NM60FDT4 Information
ST STB11NM60FDT4 technical specifications, attributes, parameters and parts with similar specifications to ST STB11NM60FDT4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Series
- FDmesh?
- JESD-609 Code
- e3
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Resistance
- 450mOhm
- Terminal Finish
- Matte Tin (Sn) - annealed
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 245
Download datasheets and manufacturer documentation for ST STB11NM60FDT4.
STB11NM60FDT4 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.There is a peak drain current of 44A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STB11NM60FDT4 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 44A.
STB11NM60FDT4 Applications
There are a lot of STMicroelectronics
STB11NM60FDT4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
