VISHAY SI3433CDV-T1-GE3

Manufacturer No:

SI3433CDV-T1-GE3

Manufacturer:

VISHAY

Package:

SOT-23-6 Thin, TSOT-23-6

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 38m ? @ 5.2A, 4.5V ±8V 1300pF @ 10V 45nC @ 8V 20V SOT-23-6 Thin, TSOT-23-6

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SI3433CDV-T1-GE3 information

VISHAY SI3433CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI3433CDV-T1-GE3.

Type
Parameter

Factory Lead Time
14 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SOT-23-6 Thin, TSOT-23-6

Number of Pins
6

Weight
19.986414mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchFET®

Published
2014

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

ECCN Code
EAR99

Resistance
38MOhm

Terminal Finish
Matte Tin (Sn)

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Pin Count
6

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
1.6W Ta 3.3W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.6W

Turn On Delay Time
20 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
38m ? @ 5.2A, 4.5V

Vgs(th) (Max) @ Id
1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 10V

Current - Continuous Drain (Id) @ 25°C
6A Tc

Gate Charge (Qg) (Max) @ Vgs
45nC @ 8V

Rise Time
22ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V

Vgs (Max)
±8V

Fall Time (Typ)
20 ns

Turn-Off Delay Time
50 ns

Continuous Drain Current (ID)
-5.2A

Threshold Voltage
-1V

Download datasheets and manufacturer documentation for VISHAY SI3433CDV-T1-GE3.

Datasheets:

vishaysiliconix-si3433cdvt1ge3-datasheets-2732.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

SI3433CDV-T1-GE3 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 10V.This device has a continuous drain current (ID) of [-5.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

SI3433CDV-T1-GE3 Features

a continuous drain current (ID) of -5.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 50 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)

SI3433CDV-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI3433CDV-T1-GE3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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