VISHAY SI3433CDV-T1-GE3
Manufacturer No:
SI3433CDV-T1-GE3
Manufacturer:
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 38m ? @ 5.2A, 4.5V ±8V 1300pF @ 10V 45nC @ 8V 20V SOT-23-6 Thin, TSOT-23-6
Quantity:
Delivery:
Payment:
PRICING (in USD)
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $ 0.305150 | $ 0.305150 |
| 10 | $ 0.203750 | $ 2.037500 |
| 100 | $ 0.138600 | $ 13.860000 |
| 500 | $ 0.108700 | $ 54.350000 |
In Stock :Available
Want a lower wholesale price? Please send RFQ, we will respond immediately.
SI3433CDV-T1-GE3 information
VISHAY SI3433CDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI3433CDV-T1-GE3.
| Type | Parameter |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 19.986414mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 38MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Type | Parameter |
|---|---|
| Pin Count | 6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta 3.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 38m ? @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250?A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 8V |
| Rise Time | 22ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | -5.2A |
| Threshold Voltage | -1V |
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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SI3433CDV-T1-GE3 Relevant information
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12.28 M
Listed Part Number
3,000+
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