STMicroelectronics SCTWA90N65G2V

Manufacturer No:

SCTWA90N65G2V

Manufacturer:

STMicroelectronics

Package:

Description:

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package

Quantity:

In Stock :3088

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Shipping & Availability

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Shipped from：HK Warehouse

Expected Shipping：Sat, May 30 - Sun, May 31, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCTWA90N65G2V Information

STMicroelectronics SCTWA90N65G2V technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics SCTWA90N65G2V.

Type
Parameter

Packaging
Tube

Part Status
Active

Manufacturer Lead Time
32 Weeks

Current - Continuous Drain (Id) @ 25°C
119A (Tc)

Drain to Source Voltage (Vdss)
650 V

Drive Voltage (Max Rds On, Min Rds On)
18V

FET Type
N-Channel

Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V

Mounting Type
Through Hole

Type
Parameter

Operating Temperature
-55°C ~ 200°C (TJ)

Package / Case
TO-247-3

Power Dissipation (Max)
565W (Tc)

Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V

Supplier Device Package
TO-247 Long Leads

Technology
SiCFET (Silicon Carbide)

Vgs (Max)
+22V, -10V

Vgs(th) (Max) @ Id
5V @ 1mA

ExportControlClassNumber
EAR99

HtsusCode
8541.29.0095

Download datasheets and manufacturer documentation for STMicroelectronics SCTWA90N65G2V.

Data sheet:

6e30da02c5005877bfcea1f08169c2c5.pdf

Material Declaration:

md_a0wt-wspc-to-247-wspc-long-wspc-leads_tswtsqfj0vf.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features