ROHM SCT4062KRHRC15

Manufacturer No:

SCT4062KRHRC15

Manufacturer:

ROHM

Package:

TO-247-4

Description:

SiC (Silicon Carbide Junction Transistor) N-Channel 81mOhm @ 12A, 18V +21V, -4V 1498 pF @ 800 V 64 nC @ 18 V 1200 V TO-247-4

Quantity:

In Stock :3442

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SCT4062KRHRC15 Information

ROHM SCT4062KRHRC15 technical specifications, attributes, parameters and parts with similar specifications to ROHM SCT4062KRHRC15.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-4

Supplier Device Package
TO-247-4L

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
18V

Power Dissipation (Max)
115W

Series
Automotive, AEC-Q101

Operating Temperature
175°C (TJ)

Type
Parameter

Technology
SiC (Silicon Carbide Junction Transistor)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
81mOhm @ 12A, 18V

Vgs(th) (Max) @ Id
4.8V @ 6.45mA

Input Capacitance (Ciss) (Max) @ Vds
1498 pF @ 800 V

Current - Continuous Drain (Id) @ 25°C
26A (Tc)

Gate Charge (Qg) (Max) @ Vgs
64 nC @ 18 V

Drain to Source Voltage (Vdss)
1200 V

Vgs (Max)
+21V, -4V

Download datasheets and manufacturer documentation for ROHM SCT4062KRHRC15.

SCT4062KRHRC15 Overview

A device's maximum input capacitance is 1498 pF @ 800 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 1200 V drain to source voltage (Vdss).