ST SCT20N120AG

Manufacturer No:

SCT20N120AG

Manufacturer:

ST

Package:

TO-247-3

Description:

SiCFET (Silicon Carbide) N-Channel 239m ? @ 10A, 20V +25V, -10V 650pF @ 400V 45nC @ 20V 1200V TO-247-3

Quantity:

In Stock :3702

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Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

SCT20N120AG Information

ST SCT20N120AG technical specifications, attributes, parameters and parts with similar specifications to ST SCT20N120AG.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-247-3

Operating Temperature
-55°C~200°C TJ

Series
Automotive, AEC-Q101

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
SiCFET (Silicon Carbide)

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Reach Compliance Code
compliant

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Type
Parameter

Power Dissipation-Max
153W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
239m ? @ 10A, 20V

Vgs(th) (Max) @ Id
3.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
650pF @ 400V

Current - Continuous Drain (Id) @ 25°C
20A Tc

Gate Charge (Qg) (Max) @ Vgs
45nC @ 20V

Drain to Source Voltage (Vdss)
1200V

Drive Voltage (Max Rds On,Min Rds On)
20V

Vgs (Max)
+25V, -10V

Download datasheets and manufacturer documentation for ST SCT20N120AG.

Datasheets:

stmicroelectronics-sct20n120ag-datasheets-4355.pdf

SCT20N120AG Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 650pF @ 400V maximal input capacitance.To operate this transistor, you will need a 1200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (20V).