ROHM RX3G18BGNC16

Manufacturer No:

RX3G18BGNC16

Manufacturer:

ROHM

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 1.64mOhm @ 90A, 10V ±20V 12000 pF @ 20 V 168 nC @ 10 V 40 V TO-220-3

Quantity:

In Stock :2659

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RX3G18BGNC16 Information

ROHM RX3G18BGNC16 technical specifications, attributes, parameters and parts with similar specifications to ROHM RX3G18BGNC16.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220AB

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
125W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.64mOhm @ 90A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
180A (Tc)

Gate Charge (Qg) (Max) @ Vgs
168 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RX3G18BGNC16.

RX3G18BGNC16 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 12000 pF @ 20 V.This transistor requires a drain-source voltage (Vdss) of 40 V.