ROHM RSH070P05TB1
Manufacturer No:
RSH070P05TB1
Manufacturer:
ROHM
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 27mOhm @ 7A, 10V ±20V 4100pF @ 10V 47.6nC @ 5V 45V 8-SOIC (0.154, 3.90mm Width)
Quantity:
In Stock :1014
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSH070P05TB1 Information
ROHM RSH070P05TB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RSH070P05TB1.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins
- 8
- Supplier Device Package
- 8-SOP
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 2W Ta
- Power Dissipation
- 2W
- FET Type
- P-Channel
- Rds On (Max) @ Id, Vgs
- 27mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 4100pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 7A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 47.6nC @ 5V
Download datasheets and manufacturer documentation for ROHM RSH070P05TB1.
RSH070P05TB1 Overview
The maximum input capacitance of this device is 4100pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.When VGS=-45V, and ID flows to VDS at -45VVDS, the drain-source breakdown voltage is -45V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 28mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 45V in order to operate.Using drive voltage (4V 10V), this device helps reduce its power consumption.
RSH070P05TB1 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of -45V voltage
single MOSFETs transistor is 28mOhm
a 45V drain to source voltage (Vdss)
RSH070P05TB1 Applications
There are a lot of ROHM Semiconductor
RSH070P05TB1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
