ROHM RS6L120BGTB1

Manufacturer No:

RS6L120BGTB1

Manufacturer:

ROHM

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 2.7mOhm @ 90A, 10V ±20V 3520 pF @ 30 V 51 nC @ 10 V 60 V 8-PowerTDFN

Quantity:

In Stock :3582

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

RS6L120BGTB1 Information

ROHM RS6L120BGTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS6L120BGTB1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
8-HSOP

Mfr
Rohm Semiconductor

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
104W (Tj)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
3520 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C
120A (Ta)

Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V

Drain to Source Voltage (Vdss)
60 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM RS6L120BGTB1.

RS6L120BGTB1 Overview

The maximum input capacitance of this device is 3520 pF @ 30 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60 V in order to operate.