ROHM RS1L180GNTB
Manufacturer No:
RS1L180GNTB
Manufacturer:
ROHM
Package:
SMALL OUTLINE, R-PDSO-F5
Description:
Power Field-Effect Transistor,
Quantity:
In Stock :9740
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1L180GNTB Information
ROHM RS1L180GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1L180GNTB.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- SMALL OUTLINE, R-PDSO-F5
- Reach Compliance Code
- not_compliant
- ECCN Code
- EAR99
- Date Of Intro
- 2017-06-23
- Samacsys Manufacturer
- ROHM Semiconductor
- Avalanche Energy Rating (Eas)
- 50 mJ
- Case Connection
- DRAIN
- Type
- Parameter
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 60 V
- Drain Current-Max (ID)
- 18 A
- Drain-source On Resistance-Max
- 0.0085 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-PDSO-F5
- JESD-609 Code
- e3
- Number of Elements
- 1
- Number of Terminals
- 5
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RS1L180GNTB.
RS1L180GNTB Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 50 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3230pF @ 30V.There is no drain current on this device since the maximum continuous current it can conduct is 18A.There is a peak drain current of 72A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
RS1L180GNTB Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 72A.
a 60V drain to source voltage (Vdss)
RS1L180GNTB Applications
There are a lot of ROHM Semiconductor
RS1L180GNTB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
