ROHM RSQ020N03TR
Manufacturer No:
RSQ020N03TR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 134m ? @ 2A, 10V ±20V 110pF @ 10V 3.1nC @ 5V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :9201
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RSQ020N03TR Information
ROHM RSQ020N03TR technical specifications, attributes, parameters and parts with similar specifications to ROHM RSQ020N03TR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2012
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
Download datasheets and manufacturer documentation for ROHM RSQ020N03TR.
RSQ020N03TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 110pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 2A.As a result of its turn-off delay time, which is 16 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 8A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSQ020N03TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 8A.
RSQ020N03TR Applications
There are a lot of ROHM Semiconductor
RSQ020N03TR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
