ROHM RS1E350GNTB
Manufacturer No:
RS1E350GNTB
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 1.7m ? @ 35A, 10V ±20V 4060pF @ 15V 68nC @ 10V 30V 8-PowerTDFN
Quantity:
In Stock :5456
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RS1E350GNTB Information
ROHM RS1E350GNTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E350GNTB.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for ROHM RS1E350GNTB.
RS1E350GNTB Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4060pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [35A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 140A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RS1E350GNTB Features
based on its rated peak drain current 140A.
a 30V drain to source voltage (Vdss)
RS1E350GNTB Applications
There are a lot of ROHM Semiconductor
RS1E350GNTB applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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