ROHM RS1E321GNTB1
Manufacturer No:
RS1E321GNTB1
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.1m ? @ 32A, 10V ±20V 2850pF @ 15V 42.8nC @ 10V 30V 8-PowerTDFN
Quantity:
In Stock :1856
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1E321GNTB1 Information
ROHM RS1E321GNTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E321GNTB1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 3W Ta
Download datasheets and manufacturer documentation for ROHM RS1E321GNTB1.
RS1E321GNTB1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 77 mJ.The maximum input capacitance of this device is 2850pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 32A.There is no pulsed drain current maximum for this device based on its rated peak drain current 128A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
RS1E321GNTB1 Features
the avalanche energy rating (Eas) is 77 mJ
based on its rated peak drain current 128A.
a 30V drain to source voltage (Vdss)
RS1E321GNTB1 Applications
There are a lot of ROHM Semiconductor
RS1E321GNTB1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
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