ROHM RS1E301GNTB1
Manufacturer No:
RS1E301GNTB1
Manufacturer:
ROHM
Package:
8-PowerTDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.2m ? @ 30A, 10V ±20V 2500pF @ 15V 39.8nC @ 10V 30V 8-PowerTDFN
Quantity:
In Stock :8659
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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RS1E301GNTB1 Information
ROHM RS1E301GNTB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RS1E301GNTB1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 3W Ta
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ROHM RS1E301GNTB1.
RS1E301GNTB1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2500pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [30A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 120A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RS1E301GNTB1 Features
the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
RS1E301GNTB1 Applications
There are a lot of ROHM Semiconductor
RS1E301GNTB1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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