ROHM RQ6E055BNTCR
Manufacturer No:
RQ6E055BNTCR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 25m ? @ 5.5A, 10V ±20V 355pF @ 15V 8.6nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :8964
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ6E055BNTCR Information
ROHM RQ6E055BNTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ6E055BNTCR.
- Type
- Parameter
- Factory Lead Time
- 20 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2014
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Power Dissipation-Max
- 1.25W Ta
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 25m ? @ 5.5A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 355pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 5.5A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 8.6nC @ 10V
Download datasheets and manufacturer documentation for ROHM RQ6E055BNTCR.
RQ6E055BNTCR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 355pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.5A amps.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
RQ6E055BNTCR Features
a continuous drain current (ID) of 5.5A
a 30V drain to source voltage (Vdss)
RQ6E055BNTCR Applications
There are a lot of ROHM Semiconductor
RQ6E055BNTCR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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12.28 M
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