ROHM RQ6E040XNTCR
Manufacturer No:
RQ6E040XNTCR
Manufacturer:
ROHM
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 50m ? @ 4A, 10V ±20V 180pF @ 10V 3.3nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :2976
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ6E040XNTCR Information
ROHM RQ6E040XNTCR technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ6E040XNTCR.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Type
- Parameter
- Power Dissipation-Max
- 950mW Ta
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 50m ? @ 4A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 180pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 4A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 3.3nC @ 5V
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4V 10V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for ROHM RQ6E040XNTCR.
RQ6E040XNTCR Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 10V is its maximum input capacitance.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.
RQ6E040XNTCR Features
a 30V drain to source voltage (Vdss)
RQ6E040XNTCR Applications
There are a lot of ROHM Semiconductor
RQ6E040XNTCR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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