ROHM RQ3P300BETB1
Manufacturer No:
RQ3P300BETB1
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 21m ? @ 10A, 10V ±20V 1250pF @ 50V 19.1nC @ 10V 100V 8-PowerVDFN
Quantity:
In Stock :4207
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3P300BETB1 Information
ROHM RQ3P300BETB1 technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3P300BETB1.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Last Time Buy
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- S-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 2W Ta 32W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
Download datasheets and manufacturer documentation for ROHM RQ3P300BETB1.
RQ3P300BETB1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 39 mJ.A device's maximum input capacitance is 1250pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 36A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
RQ3P300BETB1 Features
the avalanche energy rating (Eas) is 39 mJ
based on its rated peak drain current 40A.
a 100V drain to source voltage (Vdss)
RQ3P300BETB1 Applications
There are a lot of ROHM Semiconductor
RQ3P300BETB1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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