ROHM 2SD2170T100
ROHM 2SD2170T100

ROHM 2SD2170T100

Manufacturer No:

2SD2170T100

Manufacturer:

ROHM

Package:

TO-243AA

Description:

NPN - Darlington 150°C TJ 10?A ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2SD2170T100 information

ROHM 2SD2170T100 technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SD2170T100.

  • Type
  • Parameter
  • Contact Plating
  • Copper, Tin
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-243AA
  • Number of Pins
  • 4
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2001
  • JESD-609 Code
  • e2
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • TIN COPPER
  • Additional Feature
  • BUILT-IN BIAS RESISTOR
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • 90V
  • Max Power Dissipation
  • 2W
  • Terminal Form
  • FLAT
  • Peak Reflow Temperature (Cel)
  • 260
  • Current Rating
  • 2A
  • Time@Peak Reflow Temperature-Max (s)
  • 10
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSSO-F3
  • Number of Elements
  • 1
  • Polarity
  • NPN
  • Element Configuration
  • Single
  • Power Dissipation
  • 500mW
  • Case Connection
  • COLLECTOR
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 80MHz
  • Transistor Type
  • NPN - Darlington
  • Collector Emitter Voltage (VCEO)
  • 110V
  • Max Collector Current
  • 2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 1000 @ 1A 2V
  • Current - Collector Cutoff (Max)
  • 10?A ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 1.5V @ 1mA, 1A
  • Collector Emitter Breakdown Voltage
  • 90V
  • Transition Frequency
  • 80MHz
  • Max Breakdown Voltage
  • 90V
  • Collector Base Voltage (VCBO)
  • 110V
  • Emitter Base Voltage (VEBO)
  • 6V
  • hFE Min
  • 1000
  • Continuous Collector Current
  • 2A
  • Radiation Hardening
  • No

Download datasheets and manufacturer documentation for ROHM 2SD2170T100.

Datasheets:

PCN Design/Specification:

2SD2170T100 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 2A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 90V volts.When collector current reaches its maximum, it can reach 2A volts.

2SD2170T100 Features


the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz


2SD2170T100 Applications


There are a lot of ROHM Semiconductor
2SD2170T100 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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