ROHM RQ3E110AJTB
Manufacturer No:
RQ3E110AJTB
Manufacturer:
ROHM
Package:
8-PowerVDFN
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 11.7m ? @ 11A, 4.5V ±12V 1500pF @ 15V 13.5nC @ 4.5V 30V 8-PowerVDFN
Quantity:
In Stock :1239
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RQ3E110AJTB Information
ROHM RQ3E110AJTB technical specifications, attributes, parameters and parts with similar specifications to ROHM RQ3E110AJTB.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F5
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 2W Ta
Download datasheets and manufacturer documentation for ROHM RQ3E110AJTB.
RQ3E110AJTB Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4.5 mJ.A device's maximal input capacitance is 1500pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 11A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 44A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).
RQ3E110AJTB Features
the avalanche energy rating (Eas) is 4.5 mJ
based on its rated peak drain current 44A.
a 30V drain to source voltage (Vdss)
RQ3E110AJTB Applications
There are a lot of ROHM Semiconductor
RQ3E110AJTB applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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12.28 M
Listed Part Number
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In-stock SKU
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