Harris RFP50N05

Manufacturer No:

RFP50N05

Manufacturer:

Harris

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 22mOhm @ 50A, 10V ±20V 160 nC @ 20 V 50 V TO-220-3

Quantity:

Delivery:

Payment:

In Stock :Available

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RFP50N05 information

Harris RFP50N05 technical specifications, attributes, parameters and parts with similar specifications to Harris RFP50N05.

Type
Parameter

Package / Case
TO-220-3

Mounting Type
Through Hole

Supplier Device Package
TO-220AB

Mfr
Harris Corporation

Product Status
Active

Package
Bulk

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
132W (Tc)

Operating Temperature
-55°C ~ 175°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
22mOhm @ 50A, 10V

Vgs(th) (Max) @ Id
4V @ 250nA

Current - Continuous Drain (Id) @ 25°C
50A (Tc)

Gate Charge (Qg) (Max) @ Vgs
160 nC @ 20 V

Drain to Source Voltage (Vdss)
50 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for Harris RFP50N05.

RFP50N05 Overview

For this transistor to work, a voltage 50 V is required between drain and source (Vdss).

RFP50N05 Features

a 50 V drain to source voltage (Vdss)

RFP50N05 Applications

There are a lot of Harris Corporation
RFP50N05 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

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