ROHM RDN080N25FU6
Manufacturer No:
RDN080N25FU6
Manufacturer:
ROHM
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 500m ? @ 4A, 10V ±30V 543pF @ 10V 30nC @ 10V TO-220-3 Full Pack
Quantity:
In Stock :7483
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
RDN080N25FU6 Information
ROHM RDN080N25FU6 technical specifications, attributes, parameters and parts with similar specifications to ROHM RDN080N25FU6.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2003
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Subcategory
- FET General Purpose Power
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Reach Compliance Code
- unknown
- Configuration
- Single
- Power Dissipation-Max
- 35W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 35W
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 500m ? @ 4A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 543pF @ 10V
Download datasheets and manufacturer documentation for ROHM RDN080N25FU6.
RDN080N25FU6 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 543pF @ 10V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
RDN080N25FU6 Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 250V voltage
RDN080N25FU6 Applications
There are a lot of ROHM Semiconductor
RDN080N25FU6 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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