ROHM 2SD1963T100S
ROHM 2SD1963T100S

ROHM 2SD1963T100S

Manufacturer No:

2SD1963T100S

Manufacturer:

ROHM

Package:

TO-243AA

Description:

NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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2SD1963T100S information

ROHM 2SD1963T100S technical specifications, attributes, parameters and parts with similar specifications to ROHM 2SD1963T100S.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-243AA
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2005
  • JESD-609 Code
  • e2
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • TIN COPPER
  • HTS Code
  • 8541.21.00.75
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • 20V
  • Max Power Dissipation
  • 2W
  • Terminal Form
  • FLAT
  • Peak Reflow Temperature (Cel)
  • 260
  • Current Rating
  • 3A
  • Time@Peak Reflow Temperature-Max (s)
  • 10
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSSO-F3
  • Qualification Status
  • Not Qualified
  • Element Configuration
  • Single
  • Case Connection
  • COLLECTOR
  • Gain Bandwidth Product
  • 150MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 450mV
  • Max Collector Current
  • 3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 270 @ 500mA 2V
  • Current - Collector Cutoff (Max)
  • 500nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 450mV @ 150mA, 1.5A
  • Collector Emitter Breakdown Voltage
  • 20V
  • Transition Frequency
  • 150MHz
  • Collector Base Voltage (VCBO)
  • 50V
  • Emitter Base Voltage (VEBO)
  • 6V
  • hFE Min
  • 270
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ROHM 2SD1963T100S.

Datasheets:

PCN Design/Specification:

2SD1963T100S Overview


In this device, the DC current gain is 270 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).150MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

2SD1963T100S Features


the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 150MHz


2SD1963T100S Applications


There are a lot of ROHM Semiconductor
2SD1963T100S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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