ROHM R6515KNX3C16

Manufacturer No:

R6515KNX3C16

Manufacturer:

ROHM

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel 315mOhm @ 6.5A, 10V ±20V 1050 pF @ 25 V 27.5 nC @ 10 V 650 V TO-220-3

Quantity:

In Stock :9874

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Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

R6515KNX3C16 Information

ROHM R6515KNX3C16 technical specifications, attributes, parameters and parts with similar specifications to ROHM R6515KNX3C16.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3

Supplier Device Package
TO-220AB

Mfr
Rohm Semiconductor

Package
Tube

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
161W (Tc)

Operating Temperature
150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
315mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id
5V @ 430?A

Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C
15A (Tc)

Gate Charge (Qg) (Max) @ Vgs
27.5 nC @ 10 V

Drain to Source Voltage (Vdss)
650 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for ROHM R6515KNX3C16.

R6515KNX3C16 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1050 pF @ 25 V.This transistor requires a drain-source voltage (Vdss) of 650 V.