Renesas R1RW0416DSB-2PR#D0
Manufacturer No:
R1RW0416DSB-2PR#D0
Manufacturer:
Renesas
Package:
Description:
4M High-speed SRAM (256-kword × 16-bit)
Quantity:
In Stock :9572
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
R1RW0416DSB-2PR#D0 Information
Renesas R1RW0416DSB-2PR#D0 technical specifications, attributes, parameters and parts with similar specifications to Renesas R1RW0416DSB-2PR#D0.
- Type
- Parameter
- Carrier Type
- Tray
- Moisture Sensitivity Level (MSL)
- 2
- Access Time (ns)
- 12
- Lead Compliant
- Yes
- Lead Count (#)
- 44
- Length (mm)
- 18
- MOQ
- 1
- Memory Capacity (kbit)
- 4000
- Organization
- 256K x 16
- Organization (bit)
- x 16
- Type
- Parameter
- Pb (Lead) Free
- Yes
- Pkg. Dimensions (mm)
- 18 x 10 x 1.2
- Pkg. Type
- TSOP(2)
- Supply Voltage (V)
- 3.0 - 3.6
- Tape & Reel
- No
- Thickness (mm)
- 1.2
- Width (mm)
- 10
- Moisture Sensitivity Level (MSL)
- 2
- ECCN (US)
- EAR99
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas R1RW0416DSB-2PR#D0.
The R1RW0416D is a 4Mbit high-speed static RAM organized 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory, and a wide bit width configuration, such as cache and buffer memory in systems. Especially, the L version and S version are low-power consumption and are the best for the battery backup systems. The package prepares a 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high-density surface mounting.
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 10ns/12ns (max)
- Completely static memory, no clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible, all inputs and outputs
- Operating current: 145mA/130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max): 0.8mA (max) (L-version): 0.5mA (max) (S-version)
- Data retention current: 0.4mA (max) (L-version): 0.2mA (max) (S-version)
- Data retention voltage: 2.0V (min) (L-version, S-version)
- Center VCC and VSS type pinout
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