Renesas 2SA812B-T1B-AT

Manufacturer No:

2SA812B-T1B-AT

Manufacturer:

Renesas

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP 150°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount

Quantity:

In Stock :1169

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

2SA812B-T1B-AT Information

Renesas 2SA812B-T1B-AT technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SA812B-T1B-AT.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Supplier Device Package
3-MINIMOLD

Mfr
Renesas

Package
Bulk

Product Status
Obsolete

Operating Temperature
150°C (TJ)

Power - Max
200 mW

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 1mA, 6V

Type
Parameter

Current - Collector Cutoff (Max)
100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max)
50 V

Current - Collector (Ic) (Max)
100 mA

Frequency - Transition
180MHz

Download datasheets and manufacturer documentation for Renesas 2SA812B-T1B-AT.

2SA812B-T1B-AT Overview

In this device, the DC current gain is 90 @ 1mA, 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Product comes in the supplier's device package 3-MINIMOLD.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.