ONSEMI PZTA92
Manufacturer No:
PZTA92
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
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PZTA92 information
ONSEMI PZTA92 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI PZTA92.
- Type
- Parameter
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 15 hours ago)
- Factory Lead Time
- 27 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Weight
- 188mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1997
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -300V
- Max Power Dissipation
- 1W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Current Rating
- -500mA
- Base Part Number
- PZTA92
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 1W
- Case Connection
- COLLECTOR
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 50MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 300V
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 30mA 10V
- Current - Collector Cutoff (Max)
- 250nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage
- 300V
- Transition Frequency
- 50MHz
- Collector Emitter Saturation Voltage
- 500mV
- Max Breakdown Voltage
- 300V
- Collector Base Voltage (VCBO)
- -300V
- Emitter Base Voltage (VEBO)
- -5V
- hFE Min
- 40
- VCEsat-Max
- 0.5 V
- Collector-Base Capacitance-Max
- 6pF
Download datasheets and manufacturer documentation for ONSEMI PZTA92.
Datasheets:
PCN Design/Specification:
PCN Packaging:
PZTA92 Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).50MHz is present in the transition frequency.An input voltage of 300V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
PZTA92 Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
PZTA92 Applications
There are a lot of ON Semiconductor
PZTA92 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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