NEXPERIA PSMN015-60BS,118

Manufacturer No:

PSMN015-60BS,118

Manufacturer:

NEXPERIA

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14.8m ? @ 15A, 10V ±20V 1220pF @ 30V 20.9nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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PSMN015-60BS,118 information

NEXPERIA PSMN015-60BS,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN015-60BS,118.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2012

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
86W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
86W

Turn On Delay Time
12 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
14.8m ? @ 15A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 30V

Current - Continuous Drain (Id) @ 25°C
50A Tc

Gate Charge (Qg) (Max) @ Vgs
20.9nC @ 10V

Rise Time
13ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
7 ns

Turn-Off Delay Time
27 ns

Continuous Drain Current (ID)
50A

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
60V

Drain to Source Breakdown Voltage
60V

Avalanche Energy Rating (Eas)
44 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PSMN015-60BS,118.

Datasheets:

nexperiausainc-psmn01560bs118-datasheets-6391.pdf

RohsStatement:

nexperia-pesd3v3c1bsfyl-rohsstatement-2649.pdf

PSMN015-60BS,118 Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 44 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1220pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 60V.Using drive voltage (10V) reduces this device's overall power consumption.

PSMN015-60BS,118 Features

the avalanche energy rating (Eas) is 44 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 27 ns

PSMN015-60BS,118 Applications

There are a lot of Nexperia USA Inc.
PSMN015-60BS,118 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

User Guide

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.