NEXPERIA PSMN013-100YSEX

Manufacturer No:

PSMN013-100YSEX

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m ? @ 20A, 10V ±20V 3775pF @ 50V 75nC @ 10V SC-100, SOT-669

Quantity:

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PSMN013-100YSEX information

NEXPERIA PSMN013-100YSEX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN013-100YSEX.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Material
Metal

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2012

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Color
Black, Clear

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Pin Count
4

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
238W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
238W

Case Connection
DRAIN

Turn On Delay Time
16 ns

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
13m ? @ 20A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
3775pF @ 50V

Current - Continuous Drain (Id) @ 25°C
82A Tj

Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V

Rise Time
23ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
21 ns

Turn-Off Delay Time
42 ns

Continuous Drain Current (ID)
82A

JEDEC-95 Code
MO-235

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
100V

Drain to Source Breakdown Voltage
100V

Pulsed Drain Current-Max (IDM)
330A

Turn Off Time-Max (toff)
63ns

Turn On Time-Max (ton)
39ns

Diameter
12.7mm

Height
25.4mm

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PSMN013-100YSEX.

PSMN013-100YSEX Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3775pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 82A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 42 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (10V) reduces this device's overall power consumption.

PSMN013-100YSEX Features

a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 42 ns
based on its rated peak drain current 330A.

PSMN013-100YSEX Applications

There are a lot of Nexperia USA Inc.
PSMN013-100YSEX applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

User Guide

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Step1：Prepare product

Step2：Desiccant Protection

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Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.