NXP PMPB15XP115

Manufacturer No:

PMPB15XP115

Manufacturer:

NXP

Package:

6-UDFN Exposed Pad

Description:

MOSFET (Metal Oxide) P-Channel 19mOhm @ 8.2A, 4.5V ±12V 2875 pF @ 6 V 100 nC @ 4.5 V 12 V 6-UDFN Exposed Pad

Quantity:

In Stock :9968

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Shipped from：HK Warehouse

Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PMPB15XP115 Information

NXP PMPB15XP115 technical specifications, attributes, parameters and parts with similar specifications to NXP PMPB15XP115.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
6-UDFN Exposed Pad

Supplier Device Package
DFN2020MD-6

Package
Bulk

Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V

Mfr
NXP USA Inc.

Power Dissipation (Max)
1.7W (Ta), 12.5W (Tc)

Product Status
Active

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
19mOhm @ 8.2A, 4.5V

Vgs(th) (Max) @ Id
900mV @ 250µA

Input Capacitance (Ciss) (Max) @ Vds
2875 pF @ 6 V

Current - Continuous Drain (Id) @ 25°C
8.2A (Ta)

Gate Charge (Qg) (Max) @ Vgs
100 nC @ 4.5 V

Drain to Source Voltage (Vdss)
12 V

Vgs (Max)
±12V

Download datasheets and manufacturer documentation for NXP PMPB15XP115.

PMPB15XP115 Overview

A device's maximum input capacitance is 2875 pF @ 6 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 12 V drain to source voltage (Vdss).