NEXPERIA PHD38N02LT,118

Manufacturer No:

PHD38N02LT,118

Manufacturer:

NEXPERIA

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 16m ? @ 25A, 5V ±12V 800pF @ 20V 15.1nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

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PHD38N02LT,118 information

NEXPERIA PHD38N02LT,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PHD38N02LT,118.

Type
Parameter

Factory Lead Time
26 Weeks

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
TrenchMOS?

Published
2007

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

HTS Code
8541.29.00.75

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
57.6W

Case Connection
DRAIN

Turn On Delay Time
4 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
16m ? @ 25A, 5V

Vgs(th) (Max) @ Id
1.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
800pF @ 20V

Current - Continuous Drain (Id) @ 25°C
44.7A Tc

Gate Charge (Qg) (Max) @ Vgs
15.1nC @ 5V

Rise Time
12.5ns

Drive Voltage (Max Rds On,Min Rds On)
5V

Vgs (Max)
±12V

Fall Time (Typ)
23 ns

Turn-Off Delay Time
30 ns

Continuous Drain Current (ID)
44.7A

Gate to Source Voltage (Vgs)
12V

Max Dual Supply Voltage
20V

Drain-source On Resistance-Max
0.016Ohm

Drain to Source Breakdown Voltage
20V

Pulsed Drain Current-Max (IDM)
179A

Download datasheets and manufacturer documentation for NEXPERIA PHD38N02LT,118.

PHD38N02LT,118 Overview

The maximum input capacitance of this device is 800pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44.7A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 179A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 20V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V), this device helps reduce its power consumption.

PHD38N02LT,118 Features

a continuous drain current (ID) of 44.7A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 179A.

PHD38N02LT,118 Applications

There are a lot of Nexperia USA Inc.
PHD38N02LT,118 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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