NEXPERIA PBSS5120T,215
NEXPERIA PBSS5120T,215

NEXPERIA PBSS5120T,215

Manufacturer No:

PBSS5120T,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP 150°C TJ 100nA ICBO 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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PBSS5120T,215 information

NEXPERIA PBSS5120T,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS5120T,215.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Number of Pins
  • 3
  • Weight
  • 4.535924g
  • Transistor Element Material
  • SILICON
  • Collector-Emitter Breakdown Voltage
  • 20V
  • Number of Elements
  • 1
  • hFEMin
  • 300
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2003
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Max Power Dissipation
  • 480mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Frequency
  • 100MHz
  • Base Part Number
  • PBSS5120
  • Pin Count
  • 3
  • Element Configuration
  • Single
  • Power Dissipation
  • 480mW
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 100MHz
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 20V
  • Max Collector Current
  • 1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 250 @ 500mA 2V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 250mV @ 50mA, 1A
  • Transition Frequency
  • 100MHz
  • Max Breakdown Voltage
  • 200V
  • Collector Base Voltage (VCBO)
  • 20V
  • Emitter Base Voltage (VEBO)
  • -5V
  • Height
  • 6.35mm
  • Length
  • 6.35mm
  • Width
  • 6.35mm
  • REACH SVHC
  • No SVHC
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PBSS5120T,215.

Datasheets:

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ReachStatement:

PBSS5120T,215 Overview


In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 50mA, 1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 200V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

PBSS5120T,215 Features


the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 250mV @ 50mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 100MHz


PBSS5120T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS5120T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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