ONSEMI NTR1P02T3
Manufacturer No:
NTR1P02T3
Manufacturer:
ONSEMI
Package:
TO-236-3, SC-59, SOT-23-3
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 180m ? @ 1.5A, 10V ±20V 165pF @ 5V 2.5nC @ 5V TO-236-3, SC-59, SOT-23-3
Quantity:
In Stock :5521
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Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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NTR1P02T3 Information
ONSEMI NTR1P02T3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTR1P02T3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.21.00.95
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -20V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
Download datasheets and manufacturer documentation for ONSEMI NTR1P02T3.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTR1P02T3 Overview
A device's maximal input capacitance is 165pF @ 5V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTR1P02T3 Features
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 9 ns
NTR1P02T3 Applications
There are a lot of ON Semiconductor
NTR1P02T3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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