
ONSEMI FGA25N120ANTDTU-F109
Manufacturer No:
FGA25N120ANTDTU-F109
Manufacturer:
Package:
TO-3P-3, SC-65-3
Description:
IGBT, 1200V, 25A, NPT Trench
Quantity:


In Stock :Available
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FGA25N120ANTDTU-F109 Information
ONSEMI FGA25N120ANTDTU-F109 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FGA25N120ANTDTU-F109.
- Type
- Parameter
- Irr Typ (A)
- 27
- EAS Typ (mJ)
- -
- Package Type
- TO-3P-3L
- Case Outline
- 340BZ
- IC Max (A)
- -
- VF Typ (V)
- 2
- Eon Typ (mJ)
- 4.1
- Container Type
- TUBE
- Container Qty.
- 450
- PD Max (W)
- 312
- Type
- Parameter
- MSL Temp (°C)
- 0
- V(BR)CES Typ (V)
- 1200
- VCE(sat) Typ (V)
- -
- Eoff Typ (mJ)
- 0.96
- Trr Typ (ns)
- -
- MSL Type
- NA
- Family
- -
- Gate Charge Typ (nC)
- 200
- Short Circuit Withstand (µs)
- -
- Co-Packaged Diode
- -
Download datasheets and manufacturer documentation for ONSEMI FGA25N120ANTDTU-F109.
Datasheet:
Package Drawing:
Using onsemi's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven
Application
- Consumer Appliances
Feature
- NPT Trench Technology, Positive temperature coefficient
- Low saturation voltage: VCE(sat) , typ = 2.0V@ IC = 25A and TC = 25°C
- Low switching loss: EOFF, typ = 0.96mJ@ IC= 25A and TC= 25°C
- Extremely enhanced avalanche capability
FGA25N120ANTDTU-F109 Relevant information
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